Do you have problems with falling or staying asleep at night? Do you snore at night? Do you need to take a nap during the afternoon to get through the day? Is your blood-pressure high? Are you experiencing attention and memory (more…)

Trends in substation automation have converged upon a common communications architecture with the goal of having interoperability between a variety of Intelligent Electronic Devices (IEDs) found in the substation.  The (more…)

Complexity is the biggest challenge faced by companies looking to deliver innovative applications, products and solutions while managing costs. An integrated approach to application lifecycle management (ALM) that (more…)

Obesity is a chronic disease which has become pandemic.  The prevalence of worldwide obesity has more than doubled since 1980.  In 2008, 1.5 billion adults were overweight.  Of these 500 million were obese.  While non-surgical (more…)

Bluetooth has been re-invented as Bluetooth Low Energy and has thereby been optimized for 1) simple applications, and 2) the ability to run on coin cells for years.  The layers from the antenna up to the applications support (more…)

A magnetic tunnel junction (MTJ) consisting of a thin insulating layer (a tunnel barrier) sandwiched between two ferromagnetic electrodes exhibits the tunnel magnetoresistance (TMR) effect due to spin-dependent electron tunneling.  Since the discovery of room-temperature TMR in the mid-1990s, MTJs with an amorphous aluminum oxide (Al–O) tunnel barrier have been studied extensively.  Such MTJs exhibit a magnetoresistance (MR) ratio of several tens of percent at room temperature (RT) and have been applied to magnetoresistive random access memory (MRAM) and the read heads of hard disk drives.  MTJs with MR ratios substantially higher than 100%, however, are desired for next-generation spintronic devices.  In 2001, first-principle theories predicted that the MR ratios of epitaxial Fe/MgO/Fe MTJs with a crystalline MgO(001) barrier would be over 1000% due to the coherent tunneling of specific Bloch states.  In 2004, MR ratios of about 200% were obtained for MgO-based MTJs.  MTJs with a CoFeB/MgO/CoFe₂ structure were developed for practical application and found to have MR ratios of above 200% and other practical properties.
This lecture focuses on the physics of magnetoresistance and spin-transfer torque in MTJs and the application of MTJs to various spintronic devices such as magnetic sensors, spin-transfer-torque MRAM (STT-RAM or spin-RAM) with perpendicular magnetization, and novel spin-torque oscillators.  In addition, new types of MTJs such as spin-filter junctions with a ferromagnetic tunnel barrier will be discussed.

Svaya Nanotechnologies is revolutionizing surface engineering with an industrial scale molecular layer deposition (MLD) platform, based on Layer-by-Layer (LbL) self assembly, which has yielded performance advances in (more…)

Our speaker will bring along a 60 kw rental unit for some hands-on presentation and discussion. He will discuss rating requirements, cabling requirements, output voltage capabilities, site access, re-fueling (more…)