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February 21, 2012

Mtg: Soft Magnetic Thin Film Applications at Radio Frequencies

by @ 10:05 am. Filed under ALL, Electronics Design, NanoEngineering
 

WEDNESDAY February 22, 2012
SCV Magnetics Chapter
Speaker: Prof. Masahiro Yamaguchi, Tohoku University
Time: Networking and Pizza at 7:00 PM; Presentation at 7:30 PM
Cost: none
Place: Western Digital, 1710 Automation Parkway, San Jose
RSVP: not required
Web: www.ewh.ieee.org/r6/scv/mag

Development of new passive component technologies will enable a “More-than-Moore??? paradigm leading to innovative application-specific compact systems.? Ferromagnetic thin film materials, having high permeability at (and above) radio frequencies, are candidate materials for use in inductive passive components that are available in the forms of vacuum-deposited and electro-deposited metallic alloys, chemically synthesized nano-particulate composites, and traditional oxides, among others. Using these materials, the development of CMOS integrated inductors and integrated electromagnetic noise suppressors for Long Term Evolution, or 3.9th Generation, cell phone RFIC and Point-of-Load one-chip DC-DC converters, is attracting great interest from bothacademic and industrial communities.
This lecture begins with a review of new soft magnetic thin film applications at radio frequencies for future system-in-package (SiP) and system-on-chip (SoC) technologies. Proposed in late 1970s, these thin film soft magnet applications have evolved from inductive read/write recording head technology to the frontiers of GHz frequency device applications. Discussions covered in this lecture include: (1) Development of international cross measurements of RF permeameters [2] to evaluate RF permeability and related FMR profiles of magnetic films; (2) small signal high permeable low loss applications to CMOS integrated inductors [3]; (3) small signal lossy application to CMOS integrated electromagnetic noise suppressor [4]; (4) small to medium signal applications as new metal/ferromagnetic multi-stack “conductors??? to suppress skin effect utilizing negative permeability beyond the FMR frequency [µr’< 0, µr????0][5]; and, (5) large current permeable application to Point-of-Load type one-chip DC-DC converters. The lecture will conclude with an outlook that provides a perspective on the future of on-chipRF magnetics.

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